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167BZI N567H330 GP1500 TC143Z PC2508 AS7C3 L2500 24C16LI
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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1650
DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25ae
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 3.5 50 150 -55~150 ae ae V A W UNIT V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Diode forward voltage CONDITIONS IC=0.1A , IB=0 IC=2.5A ;IB=0.8A IC=2.5A ;IB=0.8A VCB=800V; IE=0 VCES=1500V; RBE= VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=3.5A 40 8 3 MIN 800 5.0 TYP.
2SD1650
SYMBOL VCEO VCEsat VBEsat ICBO ICES IEBO hFE fT VF
MAX
UNIT V
8.0 1.5 10 1.0 130 |I
V V A mA mA
MHz 2.0 V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1650
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
JMnic


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